This is one of the MOSFET types. This is a kind of the transistor.
Marking : 6426
AON641330V P-Channel MOSFETGeneral Description Product SummaryVDS Latest Trench Power MOSFET technology -30V Very Low RDS(ON) at 4.5V VGS ID (at VGS=-10V) -32A Low Gate Charge RDS(ON) (at VGS=-10V) 8.7. Aon6411.pdf Size:262K aosemi. RFB0807-103L Coilcraft Fixed Inductors 10 mH UnShld 10% 0.13A 34ohms AECQ2 datasheet, inventory, & pricing.
Part Number : AON6426
Function : 30V, N-Channel MOSFET (Transistor)
Package : DFN5X6 Type
Manufacturers : Alpha & Omega Semiconductor ( aosmd.com )
Image
Description
The 6426 mosfet combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load
switch and battery protection applications.
Product Summary
1. VDS (V) = 30V
2. ID = 65A (VGS = 10V)
3. RDS(ON) < 5.5mΩ (VGS = 10V)
4. RDS(ON) < 7.5mΩ (VGS = 4.5V)
Absolute Maximum Ratings at Ta = 25°C
1. Drain-Source Voltage : Vds = 30 V
2. Gate-Source Voltage : Vgs = ±20 V
3. Continuous Drain Current : Id = 65 A
4. Avalanche Current : Iar = 42 A
5. Power Dissipation : Pd = 42 W
Pinouts
6426 Datasheet PDF Download
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Type Designator: AON6426
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 42 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V
Maximum Drain Current |Id|: 65 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 37 nC
Rise Time (tr): 8.6 nS
Drain-Source Capacitance (Cd): 290 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0055 Ohm
Package: DFN5X6
AON6426 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AON6426 Datasheet (PDF)
0.1. aon6426.pdf Size:149K _aosemi
AON642630V N-Channel MOSFETGeneral Description Product SummaryVDS (V) = 30VThe AON6426 combines advanced trench MOSFETtechnology with a low resistance package to provideID = 65A (VGS = 10V)extremely low RDS(ON). This device is ideal for loadRDS(ON)
8.1. aon6422.pdf Size:155K _aosemi
AON642230V N-Channel MOSFETGeneral Description Product SummaryVDS (V) = 30VThe AON6422 combines advanced trench MOSFETtechnology with a low resistance package to provideID = 80A (VGS = 10V)extremely low RDS(ON). This device is ideal for loadRDS(ON)
8.2. aon6428.pdf Size:301K _aosemi
AON642830V N-Channel MOSFET General Description Product SummaryVDS30VThe AON6428 uses advanced trench technology toprovide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V) 43Asuitable for use as a high side switch in SMPS and RDS(ON) (at VGS=10V)
8.3. aon6424.pdf Size:390K _aosemi
AON642430V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON6424 uses advanced trench technology toprovide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V) 41Asuitable for use as a high side switch in SMPS and RDS(ON) (at VGS=10V)
Datasheet: AON6404A, AON6405, AON6407, AON6411, AON6413, AON6414A, AON6416, AON6424, 2SK3569, AON6428, AON6435, AON6440, AON6442, AON6444, AON6448, AON6450, AON6452.
LIST
6426 Mosfet Pdf
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6426 Mosfet Equivalent
MOSFET: CEZ3R04 | CEZ3P08 | CES2322 | CEB93A3 | CEF9060N | CEB6086 | CEN2321A | CEN2307A | CEM9288 | CEM6056L | CEM4052 | CEM2192 | CEU25N02 | CED25N02 | CEU20N02 | CED20N02